Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP55N055SUG-E1 NP55N055SUG-E1

Manufacturer: Renesas Electronics America Win Source Part Number: 209296-NP55N055SUG-E 1 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.2W (Ta), 77W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Obsolete(EOL) Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 55A (Tc) Max Gate Charge: 90nC @ 10V Max Input Capacitance: 5250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance