Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP55N055SDG NP55N055SDG

Manufacturer: Renesas Electronics America
Win Source Part Number: 258923-NP55N055SDG
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.2W (Ta), 77W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 55A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 4800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.5 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

MOSFET N-CH 55V 55A TO-252 Product overview: NP55N055SDG from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 55A, TO-252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 55A, TO-252, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NP55N055SDG can be used for catalog matching and distributor lookup.