Manufacturer: Renesas Electronics America
Win Source Part Number: 1083332-NP50P04KDG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta), 90W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 100nC @ 10V
Max Input Capacitance: 5100pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Balance
P-Channel 40V 50A (Tc) 1.8W (Ta), 90W (Tc) Surface Mount TO-263
P-Channel 40V 50A (Tc) 1.8W (Ta), 90W (Tc) Surface Mount TO-263
P-Channel 40V 50A (Tc) 1.8W (Ta), 90W (Tc) Surface Mount TO-263
MOSFET P-CH 40V 50A TO263
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1083332-NP50P04KDG-E1-AY | 559-NP50P04KDG-E1-AYCT-ND | NP50P04KDG-E1-AY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP50P04KDG-E1-AY | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |
| V(BR)DSS | 40 volts | ||
| PD | 1800 to 90000 milliwatts | ||
| TJ | 175 C (347 F) |
