Manufacturer: Renesas Electronics America
Win Source Part Number: 1083331-NP50P03YDG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta), 102W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: 8-HSON
Dimension: 8-SMD, Flat Lead Exposed Pad
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 96nC @ 10V
Max Input Capacitance: 3500pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 54 pct.
Supply and Demand Status: Balance
P-Channel 30V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON
P-Channel 30V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON
P-Channel 30V 50A (Tc) 1W (Ta), 102W (Tc) Surface Mount 8-HSON
MOSFET P-CH 30V 50A 8HSON
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1083331-NP50P03YDG-E1-AY | 559-NP50P03YDG-E1-AYTR-ND | NP50P03YDG-E1-AY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP50P03YDG-E1-AY | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | |
| V(BR)DSS | 30 volts | ||
| PD | 1000 to 102000 milliwatts | ||
| TJ | 175 C (347 F) |
