Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP40N10PDF-E1-AY NP40N10PDF-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 733134-NP40N10PDF-E1 -AY Packaging: Reel - TR Operating Temperature Range: 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: NP40N10PDF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.renesas.com Manufacturer Package: TO-263 (D2Pak) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3150pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.8W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 27 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): NP40N10PDF-E2-AY; Introduction Date: June 07, 2011 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: End of life (Obsolete) Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 733134-NP40N10PDF-E1 -AY Packaging: Reel - TR Operating Temperature Range: 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: NP40N10PDF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.renesas.com Manufacturer Package: TO-263 (D2Pak) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3150pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.8W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 27 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): NP40N10PDF-E2-AY; Introduction Date: June 07, 2011 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: End of life (Obsolete) Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP40N10PDF-E1-AY - 733134-NP40N10PDF-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP40N10PDF-E1-AY
733134-NP40N10PDF-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP40N10PDF-E1-AY 733134-NP40N10PDF-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 733134-NP40N10PDF-E1 -AY Packaging: Reel - TR Operating Temperature Range: 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Family Name: NP40N10PDF Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Homepage: www.renesas.com Manufacturer Package: TO-263 (D2Pak) Channel Type Type: N Drain Source Voltage: 100V Vgs(th) (Maximum) @ Id: 2.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 71nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3150pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.8W (Ta), 120W (Tc) Rds On (Maximum) @ Id, Vgs: 27 mOhm @ 20A, 10V Alternative Parts (Cross-Reference): NP40N10PDF-E2-AY; Introduction Date: June 07, 2011 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: End of life (Obsolete) Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 733134-NP40N10PDF-E1-AY
Packaging: Reel - TR
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 40A (Tc)
Family Name: NP40N10PDF
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Homepage: www.renesas.com
Manufacturer Package: TO-263 (D2Pak)
Channel Type Type: N
Drain Source Voltage: 100V
Vgs(th) (Maximum) @ Id: 2.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 71nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3150pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta), 120W (Tc)
Rds On (Maximum) @ Id, Vgs: 27 mOhm @ 20A, 10V
Alternative Parts (Cross-Reference): NP40N10PDF-E2-AY;
Introduction Date: June 07, 2011
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: End of life (Obsolete)
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - NP40N10PDF-E1-AY - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NP40N10PDF-E1-AY
Single FETs, MOSFETs NP40N10PDF-E1-AY
MOSFET N-CH 100V 40A TO263

MOSFET N-CH 100V 40A TO263

Supplier's Site Datasheet
Single FETs, MOSFETs - NP40N10PDF-E1-AY-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP40N10PDF-E1-AY-ND
Single FETs, MOSFETs NP40N10PDF-E1-AY-ND
N-Channel 100V 40A (Tc) 1.8W (Ta), 120W (Tc) Surface Mount TO-263 (D²Pak)

N-Channel 100V 40A (Tc) 1.8W (Ta), 120W (Tc) Surface Mount TO-263 (D²Pak)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP40N10PDF-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP40N10PDF-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP40N10PDF-E1-AY
MOSFET N-CH 100V 40A TO263

MOSFET N-CH 100V 40A TO263

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 733134-NP40N10PDF-E1-AY NP40N10PDF-E1-AY NP40N10PDF-E1-AY-ND NP40N10PDF-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP40N10PDF-E1-AY Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type TO-263; SOT3 TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packing Method Tape Reel; Reel - TR Tape Reel; Tape & Reel (TR)
TJ 175 C (347 F) 175 C (347 F)
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
Unlock Full Specs
to access all available technical data

Similar Products

Single FETs, MOSFETs - 448-AIMBG120R080M1XTMA1TR-ND - DigiKey
Specs
Polarity N-Channel
Transistor Technology / Material Silicon Carbide
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
View Details
2 suppliers
GaAs Fet Switches - KCB815 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details