P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
P-Channel 60V 36A (Tc) 1.8W (Ta), 56W (Tc) Surface Mount TO-263
MOSFET P-CH 60V 36A TO263 Product overview: NP36P06KDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 36A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 36A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP36P06KDG-E1-AY
Manufacturer: Renesas Electronics America
Win Source Part Number: 1083328-NP36P06KDG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta), 56W (Tc)
Family Name: NP36P06KDG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 3100pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 29.5 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): FQB47P06; FQB47P06TM; FQB47P06TM-AM002; SPB80P06P E3045A;
Introduction Date: May 07, 2007
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2022
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 36A TO263
MOSFET, P -CH, 60V, 36A, TO-263 ROHS COMPLIANT: YES
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 559-NP36P06KDG-E1-AYTR-ND | 278-NP36P06KDG-E1-AY | 1083328-NP36P06KDG-E1-AY | NP36P06KDG-E1-AY | 29AK2733 |
| Product Name | Single FETs, MOSFETs | 60V 36A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP36P06KDG-E1-AY | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P -Ch, 60V, 36A, To-263 Rohs Compliant Renesas |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | TO-263; SOT3; TO-263 | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-3; TO-263 |
| Transistor Grade / Operating Range | Automotive | ||||
| MOSFET Operating Mode | Enhancement |
