Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP35N04YUG-E1-AY NP35N04YUG-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083326-NP35N04YUG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 77W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: 8-HSON Dimension: 8-SMD, Flat Lead Exposed Pad Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 2850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 17.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP35N04YUG-E1-AY - 1083326-NP35N04YUG-E1-AY - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - NP35N04YUG-E1-AYTR-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP35N04YUG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083326-NP35N04YUG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 77W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: 8-HSON Dimension: 8-SMD, Flat Lead Exposed Pad Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 2850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 17.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP35N04YUG-E1-AY - 1083326-NP35N04YUG-E1-AY - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP35N04YUG-E1-AY
1083326-NP35N04YUG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP35N04YUG-E1-AY 1083326-NP35N04YUG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083326-NP35N04YUG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1W (Ta), 77W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: 8-HSON Dimension: 8-SMD, Flat Lead Exposed Pad Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 35A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 54nC @ 10V Max Input Capacitance: 2850pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 10 mOhm @ 17.5A, 10V Popularity: Medium Fake Threat In the Open Market: 50 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083326-NP35N04YUG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 77W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: 8-HSON
Dimension: 8-SMD, Flat Lead Exposed Pad
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 35A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 54nC @ 10V
Max Input Capacitance: 2850pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 10 mOhm @ 17.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 50 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - NP35N04YUG-E1-AYTR-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP35N04YUG-E1-AYTR-ND
Single FETs, MOSFETs NP35N04YUG-E1-AYTR-ND
N-Channel 40V 35A (Tc) 1W (Ta), 77W (Tc) Surface Mount 8-HSON

N-Channel 40V 35A (Tc) 1W (Ta), 77W (Tc) Surface Mount 8-HSON

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP35N04YUG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP35N04YUG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP35N04YUG-E1-AY
MOSFET N-CH 40V 35A 8HSON

MOSFET N-CH 40V 35A 8HSON

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1083326-NP35N04YUG-E1-AY NP35N04YUG-E1-AYTR-ND NP35N04YUG-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP35N04YUG-E1-AY Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 1000 to 77000 milliwatts
TJ 175 C (347 F)
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