Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP23N06YDG-E1-AY NP23N06YDG-E1-AY

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083316-NP23N06YDG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1W (Ta), 60W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: 8-HSON
Dimension: 8-SMD, Flat Lead Exposed Pad
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 23A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 41nC @ 10V
Max Input Capacitance: 1800pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 27 mOhm @ 11.5A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

N-Channel 60V 23A (Tc) 1W (Ta), 60W (Tc) Surface Mount 8-HSON

MOSFET N-CH 60V 23A 8HSON

MOSFET N-CH 60V 23A 8HSON

MOSFET N-CH 60V 23A 8HSON Product overview: NP23N06YDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 23A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 23A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP23N06YDG-E1-AY can be used for catalog matching and distributor lookup.