Renesas Electronics Corporation Single FETs, MOSFETs NP22N055SHE-E1-AY

N-Channel 55V 22A (Ta) 1.2W (Ta), 45W (Tc) Surface Mount TO-252 (MP-3ZK)

MOSFET N-CH 55V 22A TO252 Product overview: NP22N055SHE-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 22A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 22A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP22N055SHE-E1-AY can be used for catalog matching and distributor lookup.

Manufacturer: Renesas Electronics America
Win Source Part Number: 761854-NP22N055SHE-E1-AY
Packaging: Reel package
Operating Temperature Range: 175°C (TJ)
Package: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 22A (Ta)
Family Name: NP22N055SHE
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-252 (MP-3ZK)
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 18nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 890pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.2W (Ta), 45W (Tc)
Rds On (Maximum) @ Id, Vgs: 39 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): IRLR3105TRLPBF; IRLR3105PBF; STD16NF06L;
Introduction Date: April 04, 2005
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: Obsolete
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Limited