Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP20P04SLG-E1-AY NP20P04SLG-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083308-NP20P04SLG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.2W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083308-NP20P04SLG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.2W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP20P04SLG-E1-AY - 1083308-NP20P04SLG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP20P04SLG-E1-AY
1083308-NP20P04SLG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP20P04SLG-E1-AY 1083308-NP20P04SLG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083308-NP20P04SLG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.2W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083308-NP20P04SLG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.2W (Ta), 38W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-252 (MP-3ZK)
Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 20A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 1650pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 25 mOhm @ 10A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP20P04SLG-E1-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP20P04SLG-E1-AYTR-ND
Single FETs, MOSFETs 559-NP20P04SLG-E1-AYTR-ND
P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface Mount TO-252 (MP-3ZK)

P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface Mount TO-252 (MP-3ZK)

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP20P04SLG-E1-AYDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP20P04SLG-E1-AYDKR-ND
Single FETs, MOSFETs 559-NP20P04SLG-E1-AYDKR-ND
P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface Mount TO-252 (MP-3ZK)

P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface Mount TO-252 (MP-3ZK)

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP20P04SLG-E1-AYCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP20P04SLG-E1-AYCT-ND
Single FETs, MOSFETs 559-NP20P04SLG-E1-AYCT-ND
P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface Mount TO-252 (MP-3ZK)

P-Channel 40V 20A (Tc) 1.2W (Ta), 38W (Tc) Surface Mount TO-252 (MP-3ZK)

Buy Now Datasheet
Singapore
40V 20A TO252 MOSFET Transistor
278-NP20P04SLG-E1-AY
40V 20A TO252 MOSFET Transistor 278-NP20P04SLG-E1-AY
MOSFET P-CH 40V 20A TO252 Product overview: NP20P04SLG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 20A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 20A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP20P04SLG-E1-AY can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 20A TO252 Product overview: NP20P04SLG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 20A, TO252. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 20A, TO252, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP20P04SLG-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP20P04SLG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP20P04SLG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP20P04SLG-E1-AY
MOSFET P-CH 40V 20A TO252

MOSFET P-CH 40V 20A TO252

Supplier's Site
Mosfet, P -Ch, 40V, 20A, To-252 Rohs Compliant Renesas - 29AK2731 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P -Ch, 40V, 20A, To-252 Rohs Compliant Renesas
29AK2731
Mosfet, P -Ch, 40V, 20A, To-252 Rohs Compliant Renesas 29AK2731
MOSFET, P -CH, 40V, 20A, TO-252 ROHS COMPLIANT: YES

MOSFET, P -CH, 40V, 20A, TO-252 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1083308-NP20P04SLG-E1-AY 559-NP20P04SLG-E1-AYTR-ND 278-NP20P04SLG-E1-AY NP20P04SLG-E1-AY 29AK2731
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP20P04SLG-E1-AY Single FETs, MOSFETs 40V 20A TO252 MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P -Ch, 40V, 20A, To-252 Rohs Compliant Renesas
Polarity P-Channel; P-Channel P-Channel P-Channel
V(BR)DSS 40 volts
PD 1200 to 38000 milliwatts 1.2 milliwatts
TJ 175 C (347 F) 175 C (347 F)
Unlock Full Specs
to access all available technical data

Similar Products

DC - 18 GHz, 12 Watt Discrete Power GaN on SiC HEMT - TGF2023-2-02 - Qorvo
Specs
Transistor Technology / Material GaN on SiC
Transistor Grade / Operating Range Military
Package Type Die
View Details
4 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2SC2612 - 906350-2SC2612 - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details