Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP20P04SLG-E1-A NP20P04SLG-E1-A

Manufacturer: Renesas Electronics America Win Source Part Number: 045318-NP20P04SLG-E1 -A Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.2W (Ta), 38W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-252 (MP-3ZK) Dimension: TO-252-3, DPak (2 Leads + Tab), SC-63 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 20A (Tc) Gate-Source Threshold Voltage: 2.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 1650pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 25 mOhm @ 10A, 10V Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Balance