Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP160N04TUG-E1-AY NP160N04TUG-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083303-NP160N04TUG- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263-7 Dimension: TO-263-7, D2Pak (6 Leads + Tab) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 15750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 1083303-NP160N04TUG- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263-7 Dimension: TO-263-7, D2Pak (6 Leads + Tab) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 15750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP160N04TUG-E1-AY - 1083303-NP160N04TUG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP160N04TUG-E1-AY
1083303-NP160N04TUG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP160N04TUG-E1-AY 1083303-NP160N04TUG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1083303-NP160N04TUG- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263-7 Dimension: TO-263-7, D2Pak (6 Leads + Tab) Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 160A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 15750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2 mOhm @ 80A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1083303-NP160N04TUG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263-7
Dimension: TO-263-7, D2Pak (6 Leads + Tab)
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 160A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 15750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2 mOhm @ 80A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP160N04TUG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP160N04TUG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP160N04TUG-E1-AY
MOSFET N-CH 40V 160A TO263-7

MOSFET N-CH 40V 160A TO263-7

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1083303-NP160N04TUG-E1-AY NP160N04TUG-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP160N04TUG-E1-AY Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 40 volts
PD 1800 to 220000 milliwatts
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