Manufacturer: Renesas Electronics America
Win Source Part Number: 790769-NP110N055PUG-
Packaging: Reel package
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Part Status: Obsolete(EOL)
Family Name: NP110N055PUG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 25700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta), 288W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 55A, 10V
Alternative Parts (Cross-Reference): RJ1L12BGNTLL; RJ1L12CGNTLL; IPB021N06N3 G; IPB021N06N3GXT;
Introduction Date: January 05, 2004
ECCN: EAR99
Country of Origin: Japan, Malaysia
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited
N-Channel 55V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263
MOSFET MP-25ZP PoTr-MOSFET Low
MOSFET N-CH 55V 110A TO263
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 790769-NP110N055PUG-E1-AY | NP110N055PUG-E1-AY-ND | NP110N055PUG-E1-AY | NP110N055PUG-E1-AY |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP110N055PUG-E1-AY | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| PD | 1800 to 288000 milliwatts |
