Renesas Electronics Corporation Single FETs, MOSFETs NP110N055PUG-E1-AY

N-Channel 55V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263

Manufacturer: Renesas Electronics America
Win Source Part Number: 790769-NP110N055PUG-E1-AY
Packaging: Reel package
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Part Status: Obsolete(EOL)
Family Name: NP110N055PUG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263
Channel Type Type: N
Drain Source Voltage: 55V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 25700pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta), 288W (Tc)
Rds On (Maximum) @ Id, Vgs: 2.4 mOhm @ 55A, 10V
Alternative Parts (Cross-Reference): RJ1L12BGNTLL; RJ1L12CGNTLL; IPB021N06N3 G; IPB021N06N3GXT;
Introduction Date: January 05, 2004
ECCN: EAR99
Country of Origin: Japan, Malaysia
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 43 pct.
Supply and Demand Status: Limited

MOSFET N-CH 55V 110A TO263 Product overview: NP110N055PUG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 55V, 110A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 55V, 110A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP110N055PUG-E1-AY can be used for catalog matching and distributor lookup.