Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP110N04PUG-E1 NP110N04PUG-E1

Manufacturer: Renesas Electronics America
Win Source Part Number: 045317-NP110N04PUG-E1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 288W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 390nC @ 10V
Max Input Capacitance: 25700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.8 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 35 pct.
Supply and Demand Status: Limited

MOSFET N-CH 40V MP-25ZP/TO-263 Product overview: NP110N04PUG-E1 from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-NP110N04PUG-E1 can be used for catalog matching and distributor lookup.