Renesas Electronics Corporation Single FETs, MOSFETs NP110N03PUG-E1-AY

Description
N-Channel 30V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263
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Description
N-Channel 30V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263
Request a Quote Datasheet

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Single FETs, MOSFETs - NP110N03PUG-E1-AY-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP110N03PUG-E1-AY-ND
Single FETs, MOSFETs NP110N03PUG-E1-AY-ND
N-Channel 30V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263

N-Channel 30V 110A (Tc) 1.8W (Ta), 288W (Tc) Surface Mount TO-263

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP110N03PUG-E1-AY - 790768-NP110N03PUG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP110N03PUG-E1-AY
790768-NP110N03PUG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP110N03PUG-E1-AY 790768-NP110N03PUG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 790768-NP110N03PUG-E 1-AY Packaging: Reel package Operating Temperature Range: 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Family Name: NP110N03PUG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-263 Channel Type Type: N Drain Source Voltage: 30V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 380nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 24600pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.8W (Ta), 288W (Tc) Rds On (Maximum) @ Id, Vgs: 1.5 mOhm @ 55A, 10V Alternative Parts (Cross-Reference): PSMN1R5-30BLEJ; PSMNR90-30BL; PSMN1R5-30BLE; PSMNR90-30BL,118; Introduction Date: January 05, 2004 ECCN: EAR99 Country of Origin: Japan Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 72 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 790768-NP110N03PUG-E1-AY
Packaging: Reel package
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Family Name: NP110N03PUG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-263
Channel Type Type: N
Drain Source Voltage: 30V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 380nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 24600pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta), 288W (Tc)
Rds On (Maximum) @ Id, Vgs: 1.5 mOhm @ 55A, 10V
Alternative Parts (Cross-Reference): PSMN1R5-30BLEJ; PSMNR90-30BL; PSMN1R5-30BLE; PSMNR90-30BL,118;
Introduction Date: January 05, 2004
ECCN: EAR99
Country of Origin: Japan
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP110N03PUG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP110N03PUG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP110N03PUG-E1-AY
MOSFET N-CH 30V 110A TO263

MOSFET N-CH 30V 110A TO263

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NP110N03PUG-E1-AY-ND 790768-NP110N03PUG-E1-AY NP110N03PUG-E1-AY
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP110N03PUG-E1-AY Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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