Renesas Electronics Corporation Single FETs, MOSFETs NP109N04PUG-E1-AY

Description
N-Channel 40V 110A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-3
Request a Quote Datasheet
Description
N-Channel 40V 110A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-3
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - NP109N04PUG-E1-AY-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
NP109N04PUG-E1-AY-ND
Single FETs, MOSFETs NP109N04PUG-E1-AY-ND
N-Channel 40V 110A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-3

N-Channel 40V 110A (Tc) 1.8W (Ta), 220W (Tc) Surface Mount TO-263-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP109N04PUG-E1-AY - 1000862-NP109N04PUG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP109N04PUG-E1-AY
1000862-NP109N04PUG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP109N04PUG-E1-AY 1000862-NP109N04PUG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 1000862-NP109N04PUG- E1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.8W (Ta), 220W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263-3 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 270nC @ 10V Max Input Capacitance: 15750pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 2.3 mOhm @ 55A, 10V Popularity: Medium Fake Threat In the Open Market: 32 pct. Supply and Demand Status: Balance

Manufacturer: Renesas Electronics America
Win Source Part Number: 1000862-NP109N04PUG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.8W (Ta), 220W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263-3
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 270nC @ 10V
Max Input Capacitance: 15750pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.3 mOhm @ 55A, 10V
Popularity: Medium
Fake Threat In the Open Market: 32 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP109N04PUG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP109N04PUG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP109N04PUG-E1-AY
MOSFET N-CH 40V 110A TO263-3

MOSFET N-CH 40V 110A TO263-3

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number NP109N04PUG-E1-AY-ND 1000862-NP109N04PUG-E1-AY NP109N04PUG-E1-AY
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP109N04PUG-E1-AY Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3; TO-263-3 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
V(BR)DSS 40 volts
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