P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
Manufacturer: Renesas Electronics America
Win Source Part Number: 041937-NP100P06PDG-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Family Name: NP100P06PDG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 15000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): BBS3002-DL-1E; BBS3002-TL-1E; TJ120F06J3(TE24L,Q);
Introduction Date: May 07, 2007
ECCN: EAR99
Country of Origin: Japan, Malaysia
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 100A TO263 Product overview: NP100P06PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP100P06PDG-E1-A
MOSFET P-CH 60V 100A TO263
MOSFET P-CH 60V 100A TO263
| DigiKey | Win Source Electronics | RS Components, Ltd. | ERSAELECTRONICS PTE. LTD. | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 559-NP100P06PDG-E1-AYDKR-ND | 041937-NP100P06PDG-E1-AY | 2641238 | 278-NP100P06PDG-E1-AY | NP100P06PDG-E1-AY | NP100P06PDG-E1-AY |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P06PDG-E1-AY | MOSFETs | 60V 100A MOSFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Single FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | TO-263; SOT3; TO-263 | TO-263; MP-25ZP (TO-263) | Tape & Reel (TR) | 300 nC @ 10 V | TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Transistor Grade / Operating Range | Automotive | |||||
| V(BR)DSS | 60 volts | 60 volts | ||||
| PD | 1800 to 200000 milliwatts | 1.8 milliwatts | 1800 milliwatts |
