Renesas Electronics Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P06PDG-E1-AY NP100P06PDG-E1-AY

Description
Manufacturer: Renesas Electronics America Win Source Part Number: 041937-NP100P06PDG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Family Name: NP100P06PDG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 15000pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): BBS3002-DL-1E; BBS3002-TL-1E; TJ120F06J3(TE24L,Q); Introduction Date: May 07, 2007 ECCN: EAR99 Country of Origin: Japan, Malaysia Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Renesas Electronics America Win Source Part Number: 041937-NP100P06PDG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Family Name: NP100P06PDG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 15000pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): BBS3002-DL-1E; BBS3002-TL-1E; TJ120F06J3(TE24L,Q); Introduction Date: May 07, 2007 ECCN: EAR99 Country of Origin: Japan, Malaysia Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P06PDG-E1-AY - 041937-NP100P06PDG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P06PDG-E1-AY
041937-NP100P06PDG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P06PDG-E1-AY 041937-NP100P06PDG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 041937-NP100P06PDG-E 1-AY Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.8W (Ta), 200W (Tc) Family Name: NP100P06PDG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: 175°C (TJ) Case / Package: TO-263 Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 2.5V @ 1mA Max Gate Charge: 300nC @ 10V Max Input Capacitance: 15000pF @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): BBS3002-DL-1E; BBS3002-TL-1E; TJ120F06J3(TE24L,Q); Introduction Date: May 07, 2007 ECCN: EAR99 Country of Origin: Japan, Malaysia Estimated EOL Date: 2025 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 041937-NP100P06PDG-E1-AY
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.8W (Ta), 200W (Tc)
Family Name: NP100P06PDG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: 175°C (TJ)
Case / Package: TO-263
Dimension: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 2.5V @ 1mA
Max Gate Charge: 300nC @ 10V
Max Input Capacitance: 15000pF @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): BBS3002-DL-1E; BBS3002-TL-1E; TJ120F06J3(TE24L,Q);
Introduction Date: May 07, 2007
ECCN: EAR99
Country of Origin: Japan, Malaysia
Estimated EOL Date: 2025
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP100P06PDG-E1-AYDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP100P06PDG-E1-AYDKR-ND
Single FETs, MOSFETs 559-NP100P06PDG-E1-AYDKR-ND
P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP100P06PDG-E1-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP100P06PDG-E1-AYTR-ND
Single FETs, MOSFETs 559-NP100P06PDG-E1-AYTR-ND
P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP100P06PDG-E1-AYCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP100P06PDG-E1-AYCT-ND
Single FETs, MOSFETs 559-NP100P06PDG-E1-AYCT-ND
P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

P-Channel 60V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Buy Now Datasheet
MOSFETs - 2641238 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2641238
MOSFETs 2641238
LOW VOLTAGE POWER MOSFET

LOW VOLTAGE POWER MOSFET

Supplier's Site
MOSFETs - 2641239P - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2641239P
MOSFETs 2641239P
LOW VOLTAGE POWER MOSFET

LOW VOLTAGE POWER MOSFET

Supplier's Site
MOSFETs - 2641239 - RS Components, Ltd.
Corby, Northants, United Kingdom
MOSFETs
2641239
MOSFETs 2641239
LOW VOLTAGE POWER MOSFET

LOW VOLTAGE POWER MOSFET

Supplier's Site
Singapore, Singapore
60V 100A MOSFET Transistor
278-NP100P06PDG-E1-AY
60V 100A MOSFET Transistor 278-NP100P06PDG-E1-AY
MOSFET P-CH 60V 100A TO263 Product overview: NP100P06PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP100P06PDG-E1-A Y can be used for catalog matching and distributor lookup.

MOSFET P-CH 60V 100A TO263 Product overview: NP100P06PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP100P06PDG-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP100P06PDG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP100P06PDG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP100P06PDG-E1-AY
MOSFET P-CH 60V 100A TO263

MOSFET P-CH 60V 100A TO263

Supplier's Site
Single FETs, MOSFETs - NP100P06PDG-E1-AY - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NP100P06PDG-E1-AY
Single FETs, MOSFETs NP100P06PDG-E1-AY
MOSFET P-CH 60V 100A TO263

MOSFET P-CH 60V 100A TO263

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey RS Components, Ltd. ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 041937-NP100P06PDG-E1-AY 559-NP100P06PDG-E1-AYDKR-ND 2641238 278-NP100P06PDG-E1-AY NP100P06PDG-E1-AY NP100P06PDG-E1-AY
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P06PDG-E1-AY Single FETs, MOSFETs MOSFETs 60V 100A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel P-Channel P-Channel; P-Channel
V(BR)DSS 60 volts 60 volts
PD 1800 to 200000 milliwatts 1.8 milliwatts 1800 milliwatts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
Package Type TO-263; SOT3; TO-263 TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; MP-25ZP (TO-263) Tape & Reel (TR) 300 nC @ 10 V TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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