Renesas Electronics Corporation Single FETs, MOSFETs NP100P04PDG-E1-AY

Description
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
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Description
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
Request a Quote Datasheet

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Single FETs, MOSFETs - 559-NP100P04PDG-E1-AYCT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP100P04PDG-E1-AYCT-ND
Single FETs, MOSFETs 559-NP100P04PDG-E1-AYCT-ND
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

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Single FETs, MOSFETs - 559-NP100P04PDG-E1-AYDKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP100P04PDG-E1-AYDKR-ND
Single FETs, MOSFETs 559-NP100P04PDG-E1-AYDKR-ND
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Buy Now Datasheet
Single FETs, MOSFETs - 559-NP100P04PDG-E1-AYTR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
559-NP100P04PDG-E1-AYTR-ND
Single FETs, MOSFETs 559-NP100P04PDG-E1-AYTR-ND
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P04PDG-E1-AY - 790767-NP100P04PDG-E1-AY - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P04PDG-E1-AY
790767-NP100P04PDG-E1-AY
TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P04PDG-E1-AY 790767-NP100P04PDG-E1-AY
Manufacturer: Renesas Electronics America Win Source Part Number: 790767-NP100P04PDG-E 1-AY Packaging: Reel package Operating Temperature Range: 175°C (TJ) Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 100A (Tc) Family Name: NP100P04PDG Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Manufacturer Package: TO-263 Channel Type Type: P Drain Source Voltage: 40V Vgs(th) (Maximum) @ Id: 2.5V @ 1mA Gate Charge (Qg) (Maximum) @ Vgs: 320nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 15100pF @ 10V Vgs (Maximum): ±20V Power Dissipation (Maximum): 1.8W (Ta), 200W (Tc) Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 50A, 10V Alternative Parts (Cross-Reference): IPB120P04P4-04; IPB120P04P404ATMA1; IPB120P04P404XT; SUM110P04-04L; Introduction Date: May 07, 2007 ECCN: EAR99 Country of Origin: Japan, Malaysia Estimated EOL Date: 2022 Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: Renesas Electronics America
Win Source Part Number: 790767-NP100P04PDG-E1-AY
Packaging: Reel package
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: NP100P04PDG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: TO-263
Channel Type Type: P
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 15100pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta), 200W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): IPB120P04P4-04; IPB120P04P404ATMA1; IPB120P04P404XT; SUM110P04-04L;
Introduction Date: May 07, 2007
ECCN: EAR99
Country of Origin: Japan, Malaysia
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore
40V 100A MOSFET Transistor
278-NP100P04PDG-E1-AY
40V 100A MOSFET Transistor 278-NP100P04PDG-E1-AY
MOSFET P-CH 40V 100A TO263 Product overview: NP100P04PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP100P04PDG-E1-A Y can be used for catalog matching and distributor lookup.

MOSFET P-CH 40V 100A TO263 Product overview: NP100P04PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP100P04PDG-E1-AY can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - NP100P04PDG-E1-AY - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
NP100P04PDG-E1-AY
Single FETs, MOSFETs NP100P04PDG-E1-AY
MOSFET P-CH 40V 100A TO263

MOSFET P-CH 40V 100A TO263

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - NP100P04PDG-E1-AY - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
NP100P04PDG-E1-AY
Discrete Semiconductor Products - Transistors - FETs, MOSFETs NP100P04PDG-E1-AY
MOSFET P-CH 40V 100A TO263

MOSFET P-CH 40V 100A TO263

Supplier's Site
Mosfet, P -Ch, 40V, 100A, To-263 Rohs Compliant Renesas - 29AK2729 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P -Ch, 40V, 100A, To-263 Rohs Compliant Renesas
29AK2729
Mosfet, P -Ch, 40V, 100A, To-263 Rohs Compliant Renesas 29AK2729
MOSFET, P -CH, 40V, 100A, TO-263 ROHS COMPLIANT: YES

MOSFET, P -CH, 40V, 100A, TO-263 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 559-NP100P04PDG-E1-AYCT-ND 790767-NP100P04PDG-E1-AY 278-NP100P04PDG-E1-AY NP100P04PDG-E1-AY NP100P04PDG-E1-AY 29AK2729
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P04PDG-E1-AY 40V 100A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P -Ch, 40V, 100A, To-263 Rohs Compliant Renesas
Polarity P-Channel P-Channel P-Channel; P-Channel
Package Type TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263; SOT3 Tape & Reel (TR) TO-263; TO-263-3, D²Pak (2 Leads + Tab), TO-263AB TO-263; TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-3; TO-263
Transistor Grade / Operating Range Automotive
PD 1800 to 200000 milliwatts 1.8 milliwatts 1800 milliwatts
TJ 175 C (347 F) 175 C (347 F) 175 C (347 F)
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