MOSFET P-CH 40V 100A TO263
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
P-Channel 40V 100A (Tc) 1.8W (Ta), 200W (Tc) Surface Mount TO-263
MOSFET P-CH 40V 100A TO263 Product overview: NP100P04PDG-E1-AY from Renesas Electronics Corporation is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 40V, 100A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 40V, 100A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-NP100P04PDG-E1-A
Manufacturer: Renesas Electronics America
Win Source Part Number: 790767-NP100P04PDG-E
Packaging: Reel package
Operating Temperature Range: 175°C (TJ)
Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Family Name: NP100P04PDG
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Manufacturer Package: TO-263
Channel Type Type: P
Drain Source Voltage: 40V
Vgs(th) (Maximum) @ Id: 2.5V @ 1mA
Gate Charge (Qg) (Maximum) @ Vgs: 320nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 15100pF @ 10V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 1.8W (Ta), 200W (Tc)
Rds On (Maximum) @ Id, Vgs: 3.5 mOhm @ 50A, 10V
Alternative Parts (Cross-Reference): IPB120P04P4-04; IPB120P04P404ATMA1; IPB120P04P404XT; SUM110P04-04L;
Introduction Date: May 07, 2007
ECCN: EAR99
Country of Origin: Japan, Malaysia
Estimated EOL Date: 2022
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited
MOSFET, P -CH, 40V, 100A, TO-263 ROHS COMPLIANT: YES
MOSFET P-CH 40V 100A TO263
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | NP100P04PDG-E1-AY | 559-NP100P04PDG-E1-AYCT-ND | 278-NP100P04PDG-E1-AY | 790767-NP100P04PDG-E1-AY | 29AK2729 | NP100P04PDG-E1-AY |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | 40V 100A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - NP100P04PDG-E1-AY | Mosfet, P -Ch, 40V, 100A, To-263 Rohs Compliant Renesas | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 40 volts | |||||
| IDSS | 100000 milliamps | |||||
| PD | 1800 milliwatts | 1.8 milliwatts | 1800 to 200000 milliwatts |
