Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF NE85639-T1-A

Description
Win Source Part Number: 1082004-NE85639-T1-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 100mA Gain: 13dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): NE85639-T1-ANE85639T 1A; ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.31.0000 Mfr: Renesas Other Names: 3923-NE85639-T1-ATR Product Status: Last Time Buy
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Description
Win Source Part Number: 1082004-NE85639-T1-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 100mA Gain: 13dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): NE85639-T1-ANE85639T 1A; ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.31.0000 Mfr: Renesas Other Names: 3923-NE85639-T1-ATR Product Status: Last Time Buy
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Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF - 1082004-NE85639-T1-A - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
1082004-NE85639-T1-A
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF 1082004-NE85639-T1-A
Win Source Part Number: 1082004-NE85639-T1-A Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF Package: Tape & Reel (TR) Standard Package: 3,000 Mounting: SMD (SMT) Power - Max: 200mW Voltage - Collector Emitter Breakdown (Max): 12V Current - Collector (Ic) (Max): 100mA Gain: 13dB Transistor Type: NPN DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V Frequency - Transition: 7GHz Noise Figure (dB Typ @ f): 1.1dB @ 1GHz Package / Case: TO-253-4, TO-253AA Supplier Device Package: SOT-143 Temperature Range - Operating: 150°C (TJ) Alternative Parts (Cross-Reference): NE85639-T1-ANE85639T 1A; ECCN: EAR99 Fake Threat In the Open Market: 70 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8542.31.0000 Mfr: Renesas Other Names: 3923-NE85639-T1-ATR Product Status: Last Time Buy

Win Source Part Number: 1082004-NE85639-T1-A
Category: Discrete Semiconductor Products>Transistors - Bipolar (BJT) - RF
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Power - Max: 200mW
Voltage - Collector Emitter Breakdown (Max): 12V
Current - Collector (Ic) (Max): 100mA
Gain: 13dB
Transistor Type: NPN
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 20mA, 10V
Frequency - Transition: 7GHz
Noise Figure (dB Typ @ f): 1.1dB @ 1GHz
Package / Case: TO-253-4, TO-253AA
Supplier Device Package: SOT-143
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): NE85639-T1-ANE85639T1A;
ECCN: EAR99
Fake Threat In the Open Market: 70 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8542.31.0000
Mfr: Renesas
Other Names: 3923-NE85639-T1-ATR
Product Status: Last Time Buy

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Technical Specifications

  Win Source Electronics
Product Category RF Transistors
Product Number 1082004-NE85639-T1-A
Product Name Discrete Semiconductor Products - Transistors - Bipolar (BJT) - RF
Polarity NPN
Package Type SOT3
TJ 150 C (302 F)
Power Gain 13 dB
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