Renesas Electronics Corporation TRANSISTORS - RF Transistors (BJT) - NE661M04-T2-A NE661M04-T2-A

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1082001-NE661M04-T2-A
Packaging: Tape & Reel (TR)
Current Rating: 12 mA
Mounting: SMD (SMT)
Polarity: NPN
Power Dissipation: 39 mW
Gain: 22 dB
Categories: RF Transistors(BJT)
Case / Package: SOT-343
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Voltage Rating (DC): 3.3 V
Element Configuration: Single
Max Power Dissipation: 39 mW
Collector Emitter Breakdown Voltage: 3.3 V
Max Collector Current: 12 mA
Transition Frequency: 25 GHz
Continuous Collector Current: 12 mA

Trans GP BJT NPN 3.3V 0.012A 4-Pin(3+Tab) SOT-343 T/R Product overview: NE661M04-T2-A from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V, 0.012A. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3V, 0.012A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE661M04-T2-A can be used for catalog matching and distributor lookup.