Renesas Electronics Corporation 3.3V 0.012A Bipolar Transistor NE661M04-T2-A

Description
Trans GP BJT NPN 3.3V 0.012A 4-Pin(3+Tab) SOT-343 T/R Product overview: NE661M04-T2-A from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V, 0.012A. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3V, 0.012A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE661M04-T2-A can be used for catalog matching and distributor lookup.
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Description
Trans GP BJT NPN 3.3V 0.012A 4-Pin(3+Tab) SOT-343 T/R Product overview: NE661M04-T2-A from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V, 0.012A. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3V, 0.012A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE661M04-T2-A can be used for catalog matching and distributor lookup.
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Suppliers

Company
Product
Description
Supplier Links
Singapore, Singapore
3.3V 0.012A Bipolar Transistor
283-NE661M04-T2-A
3.3V 0.012A Bipolar Transistor 283-NE661M04-T2-A
Trans GP BJT NPN 3.3V 0.012A 4-Pin(3+Tab) SOT-343 T/R Product overview: NE661M04-T2-A from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V, 0.012A. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3V, 0.012A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE661M04-T2-A can be used for catalog matching and distributor lookup.

Trans GP BJT NPN 3.3V 0.012A 4-Pin(3+Tab) SOT-343 T/R Product overview: NE661M04-T2-A from Renesas Electronics Corporation is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 3.3V, 0.012A. Search-friendly keywords include transistor, BJT, switching, amplification, 3.3V, 0.012A, Bipolar Transistor, Bipolar RF Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 283-NE661M04-T2-A can be used for catalog matching and distributor lookup.

Supplier's Site
TRANSISTORS - RF Transistors (BJT) - NE661M04-T2-A - 1082001-NE661M04-T2-A - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - RF Transistors (BJT) - NE661M04-T2-A
1082001-NE661M04-T2-A
TRANSISTORS - RF Transistors (BJT) - NE661M04-T2-A 1082001-NE661M04-T2-A
Manufacturer: Renesas Electronics America Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1082001-NE661M04-T2- A Packaging: Tape & Reel (TR) Current Rating: 12 mA Mounting: SMD (SMT) Polarity: NPN Power Dissipation: 39 mW Gain: 22 dB Categories: RF Transistors(BJT) Case / Package: SOT-343 Popularity: Low Fake Threat In the Open Market: 61 pct. Supply and Demand Status: Shortage Lead Free: Yes Mount: Surface Mount RoHS: Compliant Voltage Rating (DC): 3.3 V Element Configuration: Single Max Power Dissipation: 39 mW Collector Emitter Breakdown Voltage: 3.3 V Max Collector Current: 12 mA Transition Frequency: 25 GHz Continuous Collector Current: 12 mA

Manufacturer: Renesas Electronics America
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1082001-NE661M04-T2-A
Packaging: Tape & Reel (TR)
Current Rating: 12 mA
Mounting: SMD (SMT)
Polarity: NPN
Power Dissipation: 39 mW
Gain: 22 dB
Categories: RF Transistors(BJT)
Case / Package: SOT-343
Popularity: Low
Fake Threat In the Open Market: 61 pct.
Supply and Demand Status: Shortage
Lead Free: Yes
Mount: Surface Mount
RoHS: Compliant
Voltage Rating (DC): 3.3 V
Element Configuration: Single
Max Power Dissipation: 39 mW
Collector Emitter Breakdown Voltage: 3.3 V
Max Collector Current: 12 mA
Transition Frequency: 25 GHz
Continuous Collector Current: 12 mA

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Technical Specifications

  ERSAELECTRONICS PTE. LTD. Win Source Electronics
Product Category Bipolar RF Transistors Bipolar RF Transistors
Product Number 283-NE661M04-T2-A 1082001-NE661M04-T2-A
Product Name 3.3V 0.012A Bipolar Transistor TRANSISTORS - RF Transistors (BJT) - NE661M04-T2-A
Polarity NPN NPN; NPN
Package Type Tape & Reel (TR) SOT3; SOT-343
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 12 milliamps
VCEO 3.3 volts 3.3 volts
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