Win Source Part Number: 1081387-N0412N-S19-A
Category: Discrete Semiconductor Products>Transistors
Package: Tube
Standard Package: 1,000
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 40 V
Current - Continuous Drain (Id) @ 25°C: 100A (Ta)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Power Dissipation (Max): 1.5W (Ta), 119W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5550 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: 150°C (TJ)
Alternative Parts (Cross-Reference): IPP80N04S403AKSA1; IPP80N04S2L03AKSA1; IPA041N04NGXKSA1; STP400N4F6; STP160N4LF6; STP150NF04;
ECCN: EAR99
Fake Threat In the Open Market: 64 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Affected
HTSUS: 8541.29.0095
Mfr: Renesas Electronics America Inc
Other Names: -1161-N0412N-S19-AY
Base Product Number: N0412N-S19
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 40V 100A (Ta) 1.5W (Ta), 119W (Tc) Through Hole TO-220
MOSFET N-CH 40V 100A TO220
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1081387-N0412N-S19-AY | N0412N-S19-AY-ND | N0412N-S19-AY | N0412N-S19-AY |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |
