Renesas Electronics Corporation Memory M3032316045NX0IBCR

Description
MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 45 ns 484-CABGA (23x23)
  • Memory - M3032316045NX0IBCR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 45 ns 484-CABGA (23x23)

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Memory - M3032316045NX0IBCR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M3032316045NX0IBCR
Memory M3032316045NX0IBCR
MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 45 ns 484-CABGA (23x23)

MRAM (Magnetoresistive RAM) Memory IC 32Mbit Parallel 45 ns 484-CABGA (23x23)

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3032316045NX0IBCR
Product Name Memory
Memory Category RAM
Access Time 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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