Renesas Electronics Corporation Memory M3016316035NX0PTBR

Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP
Description
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

Suppliers

Company
Product
Description
Supplier Links
Memory - M3016316035NX0PTBR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

MRAM (Magnetoresistive RAM) Memory IC 16Mbit Parallel 35 ns 54-TSOP

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3016316035NX0PTBR
Product Name Memory
Memory Category RAM
Access Time 35 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5SP256K36 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SSRAM; SRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 2048 kbits
View Details
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - 540746-003-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers