Renesas Electronics Corporation Memory M3004316045NX0IBCY

Description
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 45 ns 48-FBGA (10x10)
Datasheet
Description
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 45 ns 48-FBGA (10x10)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M3004316045NX0IBCY - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 45 ns 48-FBGA (10x10)

MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 45 ns 48-FBGA (10x10)

Buy Now Datasheet
4MB MRAM PARALLEL INTERFACE, 45N

4MB MRAM PARALLEL INTERFACE, 45N

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - M3004316045NX0IBCY - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory
M3004316045NX0IBCY
Integrated Circuits (ICs) - Memory M3004316045NX0IBCY
4MB MRAM PARALLEL INTERFACE, 45N

4MB MRAM PARALLEL INTERFACE, 45N

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M3004316045NX0IBCY M3004316045NX0IBCY M3004316045NX0IBCY
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category RAM RAM Non-Volatile
Access Time 45 ns 45 ns 45 ns
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
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