Renesas Electronics Corporation Memory M3004316035NX0PTBY

Description
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 54-TSOP
  • Memory - M3004316035NX0PTBY - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 54-TSOP

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Description
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Memory - M3004316035NX0PTBY - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M3004316035NX0PTBY
Memory M3004316035NX0PTBY
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 54-TSOP

MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 54-TSOP

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3004316035NX0PTBY
Product Name Memory
Memory Category RAM
Access Time 35 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
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