Renesas Electronics Corporation Memory M3004316035NX0PBCR

Description
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 484-CABGA (23x23)
  • Memory - M3004316035NX0PBCR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 484-CABGA (23x23)

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Product
Description
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Memory - M3004316035NX0PBCR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
M3004316035NX0PBCR
Memory M3004316035NX0PBCR
MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 484-CABGA (23x23)

MRAM (Magnetoresistive RAM) Memory IC 4Mbit Parallel 35 ns 484-CABGA (23x23)

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Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number M3004316035NX0PBCR
Product Name Memory
Memory Category RAM
Access Time 35 ns
Operating Temperature -40 to 105 C (-40 to 221 F)
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