Renesas Electronics Corporation Memory M30042040108X0IWAR

Description
IC RAM 4MBIT 108MHZ 8DFN
Datasheet
Description
IC RAM 4MBIT 108MHZ 8DFN
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC RAM 4MBIT 108MHZ 8DFN

IC RAM 4MBIT 108MHZ 8DFN

Supplier's Site Datasheet
Memory - M30042040108X0IWAR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 4Mbit 108 MHz 8-DFN (5x6)

MRAM (Magnetoresistive RAM) Memory IC 4Mbit 108 MHz 8-DFN (5x6)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - M30042040108X0IWAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
M30042040108X0IWAR
Integrated Circuits (ICs) - Memory M30042040108X0IWAR
IC RAM 4MBIT 108MHZ 8DFN

IC RAM 4MBIT 108MHZ 8DFN

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M30042040108X0IWAR M30042040108X0IWAR M30042040108X0IWAR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category RAM RAM Non-Volatile
Density 4000 kbits 4000 kbits 4000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Specs
Operating Temperature 0 to 115 C (32 to 239 F)
Package Type QFP; Tray
Supply Voltage 3.135V ~ 3.465V
View Details
 - LP3913SQX-ADJ/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type HVQFN48
View Details
Memory - SMJ416160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details