Renesas Electronics Corporation Memory M10082040108X0IWAR

Description
MRAM (Magnetoresistive RAM) Memory IC 8Mbit SPI 108 MHz 8-DFN (5x6)
Datasheet
Description
MRAM (Magnetoresistive RAM) Memory IC 8Mbit SPI 108 MHz 8-DFN (5x6)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M10082040108X0IWAR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
MRAM (Magnetoresistive RAM) Memory IC 8Mbit SPI 108 MHz 8-DFN (5x6)

MRAM (Magnetoresistive RAM) Memory IC 8Mbit SPI 108 MHz 8-DFN (5x6)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - M10082040108X0IWAR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
M10082040108X0IWAR
Integrated Circuits (ICs) - Memory M10082040108X0IWAR
IC RAM 8MBIT SPI 108MHZ 8DFN

IC RAM 8MBIT SPI 108MHZ 8DFN

Supplier's Site
IC RAM 8MBIT SPI 108MHZ 8DFN

IC RAM 8MBIT SPI 108MHZ 8DFN

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M10082040108X0IWAR M10082040108X0IWAR M10082040108X0IWAR
Product Name Memory Integrated Circuits (ICs) - Memory Memory
Memory Category RAM Non-Volatile RAM
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 8000 kbits 8000 kbits 8000 kbits
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