Renesas Electronics Corporation N-Channel 5.5V Dual Power MOSFET KGF16N05D-400

Description
The KGF16N05D is a dual 5.5V, 1.9mO, chip-scale, N-channel Power MOSFET. The device uses technology that uniquely integrates low cost CMOS and WLCSP fabrication processes. The chip scale package offers small area, low vertical profile and is fully compatible with standard SMT assembly processes. The KGF16N05D device offers unprecedented low on-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other power management systems.
Datasheet
Description
The KGF16N05D is a dual 5.5V, 1.9mO, chip-scale, N-channel Power MOSFET. The device uses technology that uniquely integrates low cost CMOS and WLCSP fabrication processes. The chip scale package offers small area, low vertical profile and is fully compatible with standard SMT assembly processes. The KGF16N05D device offers unprecedented low on-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other power management systems.
Datasheet

Suppliers

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Product
Description
Supplier Links
N-Channel 5.5V Dual Power MOSFET - KGF16N05D-400 - Renesas Electronics Corporation
Milpitas, CA, USA
N-Channel 5.5V Dual Power MOSFET
KGF16N05D-400
N-Channel 5.5V Dual Power MOSFET KGF16N05D-400
The KGF16N05D is a dual 5.5V, 1.9mO, chip-scale, N-channel Power MOSFET. The device uses technology that uniquely integrates low cost CMOS and WLCSP fabrication processes. The chip scale package offers small area, low vertical profile and is fully compatible with standard SMT assembly processes. The KGF16N05D device offers unprecedented low on-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other power management systems.

The KGF16N05D is a dual 5.5V, 1.9mO, chip-scale, N-channel Power MOSFET. The device uses technology that uniquely integrates low cost CMOS and WLCSP fabrication processes. The chip scale package offers small area, low vertical profile and is fully compatible with standard SMT assembly processes. The KGF16N05D device offers unprecedented low on-resistance and total gate charge, outperforming conventional trench MOSFETs and enabling high frequency, low voltage switching. The device offers extremely high power density, reducing the board size of DC/DC converters and other power management systems.

Supplier's Site Datasheet
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
KGF16N05D-400
Discrete Semiconductor Products - Transistors - FETs, MOSFETs KGF16N05D-400
MOSFET 2N-CH 5.5V 16A 20WLCSP

MOSFET 2N-CH 5.5V 16A 20WLCSP

Supplier's Site

Technical Specifications

  Renesas Electronics Corporation Acme Chip Technology Co., Limited
Product Category RF Transistors RF Transistors
Product Number KGF16N05D-400 KGF16N05D-400
Product Name N-Channel 5.5V Dual Power MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Tape Reel; Tape & Reel (TR)
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