Renesas Electronics Corporation ISL89166FBEAZ

Description
AND Gate Based MOSFET Driver
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Description
AND Gate Based MOSFET Driver
Request a Quote
Datasheet
Datasheet Summary
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The ISL89166FBEAZ is a high-speed, dual-channel MOSFET driver with 6A peak output current, designed for synchronous rectifier and switch-mode power supply applications. It comes in an 8-lead EPSOIC package with an exposed pad for thermal dissipation, measuring 5.00mm x 4.90mm overall size. The device operates from a 4.5V to 16V supply and features programmable rising-edge delays via external resistors on RDTA and RDTB pins, with delimiters specified for 2kΩ to 20kΩ resistors. It has hysteresis-enabled inputs compatible with 3.3V CMOS, 5V CMOS, and TTL logic levels, and provides 20ns rise and fall times driving a 10nF load. The exposed pad must be connected to the PCB ground plane, with a thermal impedance of 3°C/W junction-to-case. It meets RoHS compliance and is MSL rated for Pb-free reflow soldering. The part features undervoltage lockout, non-overlapping outputs to prevent shoot-through, and an internal 10kΩ pulldown during power-down. The input configuration is non-inverting.

Datasheet Summary
Powered by GS/AI

The ISL89166FBEAZ is a high-speed, dual-channel MOSFET driver with 6A peak output current, designed for synchronous rectifier and switch-mode power supply applications. It comes in an 8-lead EPSOIC package with an exposed pad for thermal dissipation, measuring 5.00mm x 4.90mm overall size. The device operates from a 4.5V to 16V supply and features programmable rising-edge delays via external resistors on RDTA and RDTB pins, with delimiters specified for 2kΩ to 20kΩ resistors. It has hysteresis-enabled inputs compatible with 3.3V CMOS, 5V CMOS, and TTL logic levels, and provides 20ns rise and fall times driving a 10nF load. The exposed pad must be connected to the PCB ground plane, with a thermal impedance of 3°C/W junction-to-case. It meets RoHS compliance and is MSL rated for Pb-free reflow soldering. The part features undervoltage lockout, non-overlapping outputs to prevent shoot-through, and an internal 10kΩ pulldown during power-down. The input configuration is non-inverting.

Suppliers

Company
Product
Description
Supplier Links
 - ISL89166FBEAZ - Rochester Electronics
Newburyport, MA, United States
AND Gate Based MOSFET Driver

AND Gate Based MOSFET Driver

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number ISL89166FBEAZ
Package Type SOP8
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