Renesas Electronics Corporation ISL89165FRTAZ-T

Description
AND Gate Based MOSFET Driver, 6A, PDSO8
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Description
AND Gate Based MOSFET Driver, 6A, PDSO8
Request a Quote
Datasheet
Datasheet Summary
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The ISL89165FRTAZ-T is a high-speed, dual-channel, 6A MOSFET driver with enable inputs, designed for synchronous rectifier and switch-mode power supply applications. It is packaged in an 8-lead 3x3 mm TDFN with an exposed thermal pad, which must be connected to the PCB ground plane for proper thermal and electrical performance. The device supports 3.3V CMOS logic thresholds and features precision input thresholds for RC-based timing control, 20ns typical rise and fall times driving a 10nF load, and matched propagation delays of less than 1ns. Each channel includes an enable input and operates with a 4.5V to 16V supply voltage, offering 6A peak source and sink currents. It includes undervoltage lockout with a typical threshold of 3.3V and a 400µs start-up delay, and meets RoHS compliance with an e3 termination finish. The part is qualified for operation from -40°C to +125°C junction temperature and has a thermal impedance of 3°C/W junction-to-case.

Datasheet Summary
Powered by GS/AI

The ISL89165FRTAZ-T is a high-speed, dual-channel, 6A MOSFET driver with enable inputs, designed for synchronous rectifier and switch-mode power supply applications. It is packaged in an 8-lead 3x3 mm TDFN with an exposed thermal pad, which must be connected to the PCB ground plane for proper thermal and electrical performance. The device supports 3.3V CMOS logic thresholds and features precision input thresholds for RC-based timing control, 20ns typical rise and fall times driving a 10nF load, and matched propagation delays of less than 1ns. Each channel includes an enable input and operates with a 4.5V to 16V supply voltage, offering 6A peak source and sink currents. It includes undervoltage lockout with a typical threshold of 3.3V and a 400µs start-up delay, and meets RoHS compliance with an e3 termination finish. The part is qualified for operation from -40°C to +125°C junction temperature and has a thermal impedance of 3°C/W junction-to-case.

Suppliers

Company
Product
Description
Supplier Links
 - ISL89165FRTAZ-T - Rochester Electronics
Newburyport, MA, United States
AND Gate Based MOSFET Driver, 6A, PDSO8

AND Gate Based MOSFET Driver, 6A, PDSO8

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number ISL89165FRTAZ-T
Package Type TDFN8
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