Renesas Electronics Corporation ISL89164FBEAZ

Description
AND Gate Based MOSFET Driver, 6A, PDSO8
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Description
AND Gate Based MOSFET Driver, 6A, PDSO8
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Datasheet
Datasheet Summary
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The ISL89164FBEAZ is a dual-channel, 6A peak current MOSFET driver with enable inputs, housed in an 8-lead EPSOIC package with an exposed thermal pad. It features non-inverting outputs, 5.0V CMOS logic thresholds, and operates from a 4.5V to 16V supply voltage. The device includes undervoltage lockout, precision input thresholds for RC timing, and 20ns rise and fall times driving a 10nF load. Outputs can be paralleled for higher current drive. The exposed pad must be soldered to a PCB ground plane for thermal and electrical performance. It meets RoHS compliance and is rated for operation from -40°C to +125°C junction temperature.

Datasheet Summary
Powered by GS/AI

The ISL89164FBEAZ is a dual-channel, 6A peak current MOSFET driver with enable inputs, housed in an 8-lead EPSOIC package with an exposed thermal pad. It features non-inverting outputs, 5.0V CMOS logic thresholds, and operates from a 4.5V to 16V supply voltage. The device includes undervoltage lockout, precision input thresholds for RC timing, and 20ns rise and fall times driving a 10nF load. Outputs can be paralleled for higher current drive. The exposed pad must be soldered to a PCB ground plane for thermal and electrical performance. It meets RoHS compliance and is rated for operation from -40°C to +125°C junction temperature.

Suppliers

Company
Product
Description
Supplier Links
 - ISL89164FBEAZ - Rochester Electronics
Newburyport, MA, United States
AND Gate Based MOSFET Driver, 6A, PDSO8

AND Gate Based MOSFET Driver, 6A, PDSO8

Supplier's Site Datasheet

Technical Specifications

  Rochester Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number ISL89164FBEAZ
Package Type SOICN-EP
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