The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622 is specifically designed to work with Intersil VR11.1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622 detects a span style="text-decorati
on: overline"PSI/span protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) and Gate Voltage Optimization Technology (GVOT) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode.brbr In the 8 Ld SOIC package, the ISL6622 drives the upper and lower gates to VCC during normal PWM mode, while the lower gate drops down to a fixed 5.75V (typically) during span style="text-decorati
on: overline"PSI/span mode. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5.75V, 6.75V, and 7.75V (typically) during span style="text-decorati
on: overline"PSI/span mode. This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.brbr To further enhance light load efficiency, the ISL6622 enables diode emulation operation during span style="text-decorati
on: overline"PSI/span mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current.brbr An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6622 has a 20k? integrated high-side gate-to-source resistor to pre
The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622 is specifically designed to work with Intersil VR11.1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622 detects a span style="text-decoration: overline"PSI/span protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) and Gate Voltage Optimization Technology (GVOT) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode.brbr In the 8 Ld SOIC package, the ISL6622 drives the upper and lower gates to VCC during normal PWM mode, while the lower gate drops down to a fixed 5.75V (typically) during span style="text-decoration: overline"PSI/span mode. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5.75V, 6.75V, and 7.75V (typically) during span style="text-decoration: overline"PSI/span mode. This provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses.brbr To further enhance light load efficiency, the ISL6622 enables diode emulation operation during span style="text-decoration: overline"PSI/span mode. This allows Discontinuous Conduction Mode (DCM) by detecting when the inductor current reaches zero and subsequently turning off the low side MOSFET to prevent it from sinking current.brbr An advanced adaptive shoot-through protection is integrated to prevent both the upper and lower MOSFETs from conducting simultaneously and to minimize dead time. The ISL6622 has a 20k? integrated high-side gate-to-source resistor to pre
