IC GATE DRVR HALF-BRIDGE 8SOIC Product overview: ISL6613AEIBZ from Renesas Electronics Corporation is a Gate Driver IC for power MOSFET and IGBT drive stages, motor inverters, DC-DC converters, lighting control, and industrial power electronics. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include gate driver IC, MOSFET driver, IGBT driver, power switching, Gate Drivers ICs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 730-ISL6613AEIBZ can be used for catalog matching and distributor lookup.
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| ERSAELECTRONICS PTE. LTD. | DigiKey | Quarktwin Technology Ltd. | Quarktwin Technology Ltd. | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|
| Product Category | Gate Drivers | Gate Drivers | Gate Drivers | Gate Drivers | Gate Drivers |
| Product Number | 730-ISL6613AEIBZ | ISL6613AEIBZ-ND | ISL6613AEIBZ | ISL6613AEIBZ | ISL6613AEIBZ |
| Product Name | Gate Driver IC | Gate Drivers | Gate Drivers | Gate Drivers | Gate Drivers |
| Driver Type | Dual Gate Driver; Half-Bridge | Dual Gate Driver | Dual Gate Driver | Dual Gate Driver | |
| Output Configuration | Noninverting; Non-Inverting | Noninverting | Inverting; Noninverting | Inverting; Noninverting | |
| Output Current | 2 amps | 2 amps | 2 amps | 2 amps | |
| Rise Time | 26 ns | 26 ns | 26 ns | 26 ns | |
| Operating Temperature | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) | -40 to 125 C (-40 to 257 F) |
