Renesas Electronics Corporation Gate Drivers ISL6605IR-T

Description
Half-Bridge Gate Driver IC Non-Inverting 8-QFN (3x3)
Description
Half-Bridge Gate Driver IC Non-Inverting 8-QFN (3x3)
Datasheet
Datasheet Summary
Powered by GS/AI

The ISL6605IR-T is a high-frequency gate driver IC designed to drive two N-Channel MOSFETs in synchronous-rectified buck converter applications. It features adaptive shoot-through protection to prevent simultaneous conduction of both MOSFETs, thereby enhancing efficiency and reliability. The driver supports high switching frequencies with a fast output rise and fall time, achieving an ultra-low propagation delay of 8ns. It can handle a load of 3000pF and provides a typical sink current of 4A for the lower gate driver, which helps maintain the gate voltage during rapid phase transitions. The device operates from a single 5V supply and includes an internal bootstrap Schottky diode, simplifying circuit design and reducing component count. Additionally, it incorporates a three-state PWM input for power stage shutdown, which helps prevent negative transients on the output voltage during shutdown. The ISL6605IR-T is available in an 8-lead QFN package, which is compliant with JEDEC standards and offers a compact footprint suitable for high-density PCB layouts. This product is suitable for applications such as core voltage supplies for microprocessors and high-frequency DC/DC converters.

Datasheet Summary
Powered by GS/AI

The ISL6605IR-T is a high-frequency gate driver IC designed to drive two N-Channel MOSFETs in synchronous-rectified buck converter applications. It features adaptive shoot-through protection to prevent simultaneous conduction of both MOSFETs, thereby enhancing efficiency and reliability. The driver supports high switching frequencies with a fast output rise and fall time, achieving an ultra-low propagation delay of 8ns. It can handle a load of 3000pF and provides a typical sink current of 4A for the lower gate driver, which helps maintain the gate voltage during rapid phase transitions. The device operates from a single 5V supply and includes an internal bootstrap Schottky diode, simplifying circuit design and reducing component count. Additionally, it incorporates a three-state PWM input for power stage shutdown, which helps prevent negative transients on the output voltage during shutdown. The ISL6605IR-T is available in an 8-lead QFN package, which is compliant with JEDEC standards and offers a compact footprint suitable for high-density PCB layouts. This product is suitable for applications such as core voltage supplies for microprocessors and high-frequency DC/DC converters.

Suppliers

Company
Product
Description
Supplier Links
Gate Drivers - ISL6605IR-T - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Gate Drivers
ISL6605IR-T
Gate Drivers ISL6605IR-T
Half-Bridge Gate Driver IC Non-Inverting 8-QFN (3x3)

Half-Bridge Gate Driver IC Non-Inverting 8-QFN (3x3)

Buy Now Datasheet

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Gate Drivers
Product Number ISL6605IR-T
Product Name Gate Drivers
Driver Type Dual Gate Driver
Output Configuration Inverting; Noninverting
Output Current 2 amps
Supply Voltage 4.5 to 5.5 volts
Rise Time 8 ns
Unlock Full Specs
to access all available technical data

Similar Products

Gate Drivers - 448-2EDS8265HXUMA2DKR-ND - DigiKey
Infineon Technologies AG
Specs
Driver Type Dual Gate Driver
Output Configuration Noninverting
Output Current 8 amps
View Details
5 suppliers
 - 75126D - Rochester Electronics
Rochester Electronics
Specs
Package Type SOIC; SOIC
Packing Method Tube; Tube; Other
View Details
Power Distribution Switches, Load Drivers - A2982SLWTR - Quarktwin Technology Ltd.
Specs
Driver Type High-side
Number of Outputs 8
Output Configuration Inverting; Noninverting
View Details
2 suppliers