Renesas Electronics Corporation Synchronous Rectified MOSFET Driver ISL6596IRZ-T

Description
The ISL6596 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous buck converter topology. Combine this driver with the Renesas Multi-Phase Buck PWM controllers to form a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver can drive a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented with an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6596 features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during the PHASE node rising edge and preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6596 also features an input that recognizes a high-impedance state, working with Renesas multi-phase 3.3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage.
Datasheet
Description
The ISL6596 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous buck converter topology. Combine this driver with the Renesas Multi-Phase Buck PWM controllers to form a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver can drive a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented with an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6596 features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during the PHASE node rising edge and preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6596 also features an input that recognizes a high-impedance state, working with Renesas multi-phase 3.3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage.
Datasheet

Suppliers

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Product
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Synchronous Rectified MOSFET Driver - ISL6596IRZ-T - Renesas Electronics Corporation
Milpitas, CA, USA
Synchronous Rectified MOSFET Driver
ISL6596IRZ-T
Synchronous Rectified MOSFET Driver ISL6596IRZ-T
The ISL6596 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous buck converter topology. Combine this driver with the Renesas Multi-Phase Buck PWM controllers to form a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors. The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver can drive a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented with an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously. The ISL6596 features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during the PHASE node rising edge and preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node. The ISL6596 also features an input that recognizes a high-impedance state, working with Renesas multi-phase 3.3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage.

The ISL6596 is a high frequency, MOSFET driver optimized to drive two N-Channel power MOSFETs in a synchronous buck converter topology. Combine this driver with the Renesas Multi-Phase Buck PWM controllers to form a complete single-stage core-voltage regulator solution with high efficiency performance at high switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V), minimizing driver switching losses in high MOSFET gate capacitance and high switching frequency applications. Each driver can drive a 3nF load with less than 10ns rise/fall time. Bootstrapping of the upper gate driver is implemented with an internal low forward drop diode, reducing implementation cost, complexity, and allowing the use of higher performance, cost effective N-Channel MOSFETs. Adaptive shoot-through protection is integrated to prevent both MOSFETs from conducting simultaneously.
The ISL6596 features 4A typical sink current for the lower gate driver, enhancing the lower MOSFET gate hold-down capability during the PHASE node rising edge and preventing power loss caused by the self turn-on of the lower MOSFET due to the high dV/dt of the switching node.
The ISL6596 also features an input that recognizes a high-impedance state, working with Renesas multi-phase 3.3V or 5V PWM controllers to prevent negative transients on the controlled output voltage when operation is suspended. This feature eliminates the need for the Schottky diode that may be used in a power system to protect the load from negative output voltage damage.

Supplier's Site Datasheet

Technical Specifications

  Renesas Electronics Corporation
Product Category IC Power Supplies
Product Number ISL6596IRZ-T
Product Name Synchronous Rectified MOSFET Driver
Package Type Other; DFN10
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