Renesas Electronics Corporation Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF610S2497

Description
3.3A 200V 1.500 OHM N-CHANNEL
Description
3.3A 200V 1.500 OHM N-CHANNEL

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IRF610S2497 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IRF610S2497
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IRF610S2497
3.3A 200V 1.500 OHM N-CHANNEL

3.3A 200V 1.500 OHM N-CHANNEL

Supplier's Site

Technical Specifications

  Acme Chip Technology Co., Limited
Product Category RF Transistors
Product Number IRF610S2497
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Packing Method Bulk; Bulk
Unlock Full Specs
to access all available technical data

Similar Products

Discrete Semiconductor Products - Transistors - IGBTs - 63-8028 - Acme Chip Technology Co., Limited
Specs
Packing Method Bulk; Bulk
View Details
DC - 25 GHz, 10 Watt, 28 V GaN RF Transistor - TGF2936 - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type die
View Details