Renesas Electronics Corporation Memory IDT71V67903S85PFI

Description
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)
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Datasheet
Datasheet Summary
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The IDT71V67903S85PFI is a 3.3V synchronous SRAM organized as 512K x 18 bits, designed for high-speed applications with access times of 8.5 ns at a clock frequency of up to 87 MHz. It features a flow-through architecture with no registers in the data output path, allowing for rapid data access. The memory supports burst mode operation, providing four cycles of data output for a single address input, which enhances performance in data-intensive applications. This SRAM includes a global write control and individual byte write enables, facilitating flexible data handling. It operates within an industrial temperature range of -40¬8C to +85¬8C, making it suitable for various environments. The device is available in multiple package options, including a 100-pin thin plastic quad flatpack (TQFP) and ball grid array (BGA) configurations. The power-down feature is controlled via a ZZ input, ensuring low power consumption during inactive periods.

Datasheet Summary
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The IDT71V67903S85PFI is a 3.3V synchronous SRAM organized as 512K x 18 bits, designed for high-speed applications with access times of 8.5 ns at a clock frequency of up to 87 MHz. It features a flow-through architecture with no registers in the data output path, allowing for rapid data access. The memory supports burst mode operation, providing four cycles of data output for a single address input, which enhances performance in data-intensive applications. This SRAM includes a global write control and individual byte write enables, facilitating flexible data handling. It operates within an industrial temperature range of -40¬8C to +85¬8C, making it suitable for various environments. The device is available in multiple package options, including a 100-pin thin plastic quad flatpack (TQFP) and ball grid array (BGA) configurations. The power-down feature is controlled via a ZZ input, ensuring low power consumption during inactive periods.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V67903S85PFI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)

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IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IDT71V67903S85PFI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V67903S85PFI
Integrated Circuits (ICs) - Memory IDT71V67903S85PFI
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site
Memory - IDT71V67903S85PFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 87 MHz 8.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 87 MHz 8.5 ns 100-TQFP (14x14)

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Technical Specifications

  DigiKey Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V67903S85PFI-ND IDT71V67903S85PFI IDT71V67903S85PFI IDT71V67903S85PFI
Product Name Memory Memory Integrated Circuits (ICs) - Memory Memory
Memory Category SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type TQFP; 100-LQFP QFP QFP; 100-LQFP
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