The IDT71V67903S85PFI is a 3.3V synchronous SRAM organized as 512K x 18 bits, designed for high-speed applications with access times of 8.5 ns at a clock frequency of up to 87 MHz. It features a flow-through architecture with no registers in the data output path, allowing for rapid data access. The memory supports burst mode operation, providing four cycles of data output for a single address input, which enhances performance in data-intensive applications. This SRAM includes a global write control and individual byte write enables, facilitating flexible data handling. It operates within an industrial temperature range of -40¬8C to +85¬8C, making it suitable for various environments. The device is available in multiple package options, including a 100-pin thin plastic quad flatpack (TQFP) and ball grid array (BGA) configurations. The power-down feature is controlled via a ZZ input, ensuring low power consumption during inactive periods.
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)
IC SRAM 9MBIT PARALLEL 100TQFP
IC SRAM 9MBIT PARALLEL 100TQFP
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 87 MHz 8.5 ns 100-TQFP (14x14)
| DigiKey | Shenzhen Shengyu Electronics Technology Limited | Lingto Electronic Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IDT71V67903S85PFI-ND | IDT71V67903S85PFI | IDT71V67903S85PFI | IDT71V67903S85PFI |
| Product Name | Memory | Integrated Circuits (ICs) - Memory | Memory | Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 9000 kbits | 9000 kbits | 9000 kbits | 9000 kbits |
| Package Type | TQFP; 100-LQFP | QFP | QFP; 100-LQFP |
