Renesas Electronics Corporation Memory IDT71V67903S85PFI

Description
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)
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Datasheet
Datasheet Summary
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The IDT71V67903S85PFI is a 3.3V synchronous SRAM organized as 512K x 18 bits, designed for high-speed applications with access times of 8.5 ns at a clock frequency of up to 87 MHz. It features a flow-through architecture with no registers in the data output path, allowing for rapid data access. The memory supports burst mode operation, providing four cycles of data output for a single address input, which enhances performance in data-intensive applications. This SRAM includes a global write control and individual byte write enables, facilitating flexible data handling. It operates within an industrial temperature range of -40¬8C to +85¬8C, making it suitable for various environments. The device is available in multiple package options, including a 100-pin thin plastic quad flatpack (TQFP) and ball grid array (BGA) configurations. The power-down feature is controlled via a ZZ input, ensuring low power consumption during inactive periods.

Datasheet Summary
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The IDT71V67903S85PFI is a 3.3V synchronous SRAM organized as 512K x 18 bits, designed for high-speed applications with access times of 8.5 ns at a clock frequency of up to 87 MHz. It features a flow-through architecture with no registers in the data output path, allowing for rapid data access. The memory supports burst mode operation, providing four cycles of data output for a single address input, which enhances performance in data-intensive applications. This SRAM includes a global write control and individual byte write enables, facilitating flexible data handling. It operates within an industrial temperature range of -40¬8C to +85¬8C, making it suitable for various environments. The device is available in multiple package options, including a 100-pin thin plastic quad flatpack (TQFP) and ball grid array (BGA) configurations. The power-down feature is controlled via a ZZ input, ensuring low power consumption during inactive periods.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V67903S85PFI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mb (512K x 18) Parallel 87MHz 8.5ns 100-TQFP (14x14)

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V67903S85PFI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V67903S85PFI
Integrated Circuits (ICs) - Memory IDT71V67903S85PFI
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site
Memory - IDT71V67903S85PFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 87 MHz 8.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 87 MHz 8.5 ns 100-TQFP (14x14)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V67903S85PFI-ND IDT71V67903S85PFI IDT71V67903S85PFI IDT71V67903S85PFI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type TQFP; 100-LQFP QFP QFP; 100-LQFP
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