Renesas Electronics Corporation Memory IDT71V67703S75PFI

Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 117MHz 7.5ns 100-TQFP (14x14)
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Description
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 117MHz 7.5ns 100-TQFP (14x14)
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Datasheet
Datasheet Summary
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The IDT71V67703S75PFI is a high-speed synchronous SRAM memory device organized as 256K x 36 or 512K x 18 configurations. It operates with a core power supply of 3.3V and supports fast access times of 7.5ns at a clock frequency of up to 117MHz. The device features a flow-through architecture, allowing for immediate data output without internal registers in the data path. It includes a burst mode capability, enabling the delivery of four cycles of data for a single address, which enhances performance for applications requiring rapid data access. The memory supports various control inputs, including global write control, byte write enables, and chip select signals, facilitating flexible data handling. It is packaged in a JEDEC standard 100-pin thin plastic quad flatpack (TQFP), as well as in BGA configurations, making it suitable for diverse design requirements. Additionally, the device is available in an industrial temperature range of -40¬8C to +85¬8C, and green parts are offered for environmentally conscious designs.

Datasheet Summary
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The IDT71V67703S75PFI is a high-speed synchronous SRAM memory device organized as 256K x 36 or 512K x 18 configurations. It operates with a core power supply of 3.3V and supports fast access times of 7.5ns at a clock frequency of up to 117MHz. The device features a flow-through architecture, allowing for immediate data output without internal registers in the data path. It includes a burst mode capability, enabling the delivery of four cycles of data for a single address, which enhances performance for applications requiring rapid data access. The memory supports various control inputs, including global write control, byte write enables, and chip select signals, facilitating flexible data handling. It is packaged in a JEDEC standard 100-pin thin plastic quad flatpack (TQFP), as well as in BGA configurations, making it suitable for diverse design requirements. Additionally, the device is available in an industrial temperature range of -40¬8C to +85¬8C, and green parts are offered for environmentally conscious designs.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V67703S75PFI-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 117MHz 7.5ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mb (256K x 36) Parallel 117MHz 7.5ns 100-TQFP (14x14)

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Integrated Circuits (ICs) - Memory - IDT71V67703S75PFI - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V67703S75PFI
Integrated Circuits (ICs) - Memory IDT71V67703S75PFI
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site Datasheet
Memory - IDT71V67703S75PFI - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR Memory IC 9Mbit Parallel 117 MHz 7.5 ns 100-TQFP (14x14)

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Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V67703S75PFI-ND IDT71V67703S75PFI IDT71V67703S75PFI IDT71V67703S75PFI
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type TQFP; 100-LQFP QFP QFP; 100-LQFP
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