Renesas Electronics Corporation Memory IDT71V67602S150BQI

The IDT71V67602S150BQI is a high-speed synchronous SRAM with a memory configuration of 256K x 36 bits. It operates at a core voltage of 3.3V and features a 2.5V I/O supply. The device supports burst mode operation, allowing for four cycles of data output for a single address, which enhances system performance. It has a clock access time of 3.8 ns at a frequency of 150 MHz, making it suitable for applications requiring fast data access. The SRAM includes write, data, address, and control registers, with a self-timed write cycle that can be initiated at the end of the write operation. The internal burst address counter facilitates efficient data access, and the LBO input allows selection between interleaved or linear burst modes. The device is packaged in a JEDEC standard 100-pin thin quad flatpack (TQFP), as well as in BGA configurations, making it versatile for various design requirements. Engineers considering this product should note its high performance and flexibility in burst mode operations, which can be advantageous in high-speed applications.