Renesas Electronics Corporation Memory IDT71V65602S150PF8

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)
Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V65602S150PF8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 100-TQFP (14x14)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 100TQFP

IC SRAM 9MBIT PARALLEL 100TQFP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V65602S150PF8 IDT71V65602S150PF8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 3.8 ns 3.8 ns
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C01/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
SN54ABT7819 512 x 18 x 2 Synchronous Bidirectional FIFO Memory - 5962-9470401QXA - Texas Instruments
Specs
Memory Category FIFO
Package Type CPGA
View Details
3 suppliers
Memory - SMJ28F010B - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 120 to 200 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details