Renesas Electronics Corporation Memory IDT71V65602S150BQ

Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (256K x 36) Parallel 150MHz 3.8ns 165-CABGA (13x15)
Request a Quote Datasheet
Description
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (256K x 36) Parallel 150MHz 3.8ns 165-CABGA (13x15)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V65602S150BQ-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (256K x 36) Parallel 150MHz 3.8ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mb (256K x 36) Parallel 150MHz 3.8ns 165-CABGA (13x15)

Buy Now Datasheet
Memory - IDT71V65602S150BQ - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 150 MHz 3.8 ns 165-CABGA (13x15)

Buy Now Datasheet
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IDT71V65602S150BQ - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V65602S150BQ
Integrated Circuits (ICs) - Memory IDT71V65602S150BQ
IC SRAM 9MBIT PARALLEL 165CABGA

IC SRAM 9MBIT PARALLEL 165CABGA

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V65602S150BQ-ND IDT71V65602S150BQ IDT71V65602S150BQ IDT71V65602S150BQ
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Density 9000 kbits 9000 kbits 9000 kbits 9000 kbits
Package Type 165-TBGA BGA; 165-TBGA BGA
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 27C010-55DM/B - Quarktwin Technology Ltd.
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 55 ns
Density 1000 kbits
View Details
2 suppliers
Memory - RAM - MT5C1008F45L/883C - 1215637-MT5C1008F45L/883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -40 C (-40 F)
Density 1000 kbits
View Details
2 suppliers
 - NM27C040Q170 - Rochester Electronics
Specs
Memory Category PROM
Package Type DIP; CDIP32
View Details
3 suppliers