Renesas Electronics Corporation Memory IDT71V65602S133PFG

The IDT71V65602S133PFG is a 3.3V synchronous SRAM with a capacity of 9 Megabits, available in configurations of 256K x 36 or 512K x 18. It operates at a high speed of 150MHz, providing a clock-to-data access time of 3.8ns. This memory device features Zero Bus Turnaround (ZBT,Ñ¢), which eliminates dead cycles between read and write operations, enhancing overall system performance. The SRAM includes an internally synchronized output buffer, allowing for simplified control without the need for an output enable signal. It supports pipelined applications with positive clock-edge triggering for address, data, and control signals. The device also features a burst capability, providing four cycles of data for a single address, with the burst order selectable between linear and interleaved modes. Power management is facilitated through a power-down mode controlled by the ZZ input, and the device operates with a core power supply of 3.3V and a 2.5V I/O supply. It is available in multiple package options, including a 100-pin plastic thin quad flatpack (TQFP), a 119-ball grid array (BGA), and a 165 fine pitch ball grid array (fBGA). This product is suitable for applications requiring high-speed data access and efficient memory management.