Renesas Electronics Corporation Memory IDT71V424S10YI8

Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ
Request a Quote Datasheet
Description
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V424S10YI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mb (512K x 8) Parallel 10ns 36-SOJ

Buy Now Datasheet
Memory - IDT71V424S10YI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - IDT71V424S10YI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V424S10YI8
Integrated Circuits (ICs) - Memory IDT71V424S10YI8
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site

Technical Specifications

  DigiKey Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V424S10YI8-ND IDT71V424S10YI8 IDT71V424S10YI8 IDT71V424S10YI8
Product Name Memory Memory Memory Integrated Circuits (ICs) - Memory
Memory Category SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip Volatile; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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