Renesas Electronics Corporation Memory IDT71V424L10YI8

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V424L10YI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 36-SOJ

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 36SOJ

IC SRAM 4MBIT PARALLEL 36SOJ

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V424L10YI8 IDT71V424L10YI8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JM38510/23103BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
SDRAM - 2420777P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 0.4000 ns
Number of Words 64000 k
View Details
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 448-CY14B108L-ZS20XITTR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category NVRAM; NVSRAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 8000 kbits
View Details
4 suppliers