Renesas Electronics Corporation Memory IDT71V416YS10Y8

Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet
Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site Datasheet
Memory - IDT71V416YS10Y8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-SOJ

Buy Now Datasheet

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IDT71V416YS10Y8 IDT71V416YS10Y8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Density 4000 kbits 4000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SRAM - 71024S15TY - 907788-71024S15TY - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type SOJ; 32-SOJ
View Details
3 suppliers
Memory - 8611200826 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Logic - Logic - FIFOs Memory - SN74ACT2235-30PM - 1094819-SN74ACT2235-30PM - Win Source Electronics
Specs
Memory Category FIFO
Package Type QFP; LQFP
View Details
5V Memory IC and Storage Component - 774-MT5C1005C-25L-883C - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers