Renesas Electronics Corporation Memory IDT71V416VS12PHI8

Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 44-TSOP II
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Description
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 44-TSOP II
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Datasheet
Datasheet Summary
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The IDT71V416VS12PHI8 is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10, 12, or 15 nanoseconds, depending on the specific variant. The device includes an output enable pin with a fast operation time of 5 nanoseconds and supports LVTTL-compatible bidirectional data inputs and outputs. This memory chip utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various systems. It is available in multiple package options, including a 44-pin, 400 mil Plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array measuring 9mm x 9mm. The IDT71V416VS12PHI8 is suitable for applications requiring reliable and efficient memory solutions with low power consumption.

Datasheet Summary
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The IDT71V416VS12PHI8 is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 10, 12, or 15 nanoseconds, depending on the specific variant. The device includes an output enable pin with a fast operation time of 5 nanoseconds and supports LVTTL-compatible bidirectional data inputs and outputs. This memory chip utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various systems. It is available in multiple package options, including a 44-pin, 400 mil Plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array measuring 9mm x 9mm. The IDT71V416VS12PHI8 is suitable for applications requiring reliable and efficient memory solutions with low power consumption.

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416VS12PHI8-ND - DigiKey
Thief River Falls, MN, United States
SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 12ns 44-TSOP II

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - IDT71V416VS12PHI8 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
IDT71V416VS12PHI8
Integrated Circuits (ICs) - Memory IDT71V416VS12PHI8
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site
Memory - IDT71V416VS12PHI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 12 ns 44-TSOP II

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number IDT71V416VS12PHI8-ND IDT71V416VS12PHI8 IDT71V416VS12PHI8 IDT71V416VS12PHI8
Product Name Memory Integrated Circuits (ICs) - Memory Memory Memory
Memory Category SRAM Chip Volatile; SRAM Chip SRAM; SRAM Chip SRAM; SRAM Chip
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 4000 kbits 4000 kbits 4000 kbits 4000 kbits
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