Renesas Electronics Corporation Memory IDT71V416VS10PHI8

Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Datasheet
Description
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IDT71V416VS10PHI8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 44-TSOP II

Buy Now Datasheet
IC SRAM 4MBIT PARALLEL 44TSOP II

IC SRAM 4MBIT PARALLEL 44TSOP II

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IDT71V416VS10PHI8 IDT71V416VS10PHI8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 10 ns 10 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

 - LP3913SQ-AA/NOPB - Rochester Electronics
Texas Instruments
Specs
Memory Category Flash
Package Type WQFN48
View Details
Flash Memory - 1882548 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - 71256L25Y - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 256 kbits
View Details
Memory - MYX6M4424 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MOSFET
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type CDIP-8LD
View Details