SRAM - Asynchronous Memory IC 4Mb (256K x 16) Parallel 10ns 48-CABGA (9x9)
IC SRAM 4MBIT PARALLEL 48CABGA Product overview: IDT71V416VS10BEI from Renesas Electronics Corporation is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-IDT71V416VS10BEI
SRAM - Asynchronous Memory IC 4Mbit Parallel 10 ns 48-CABGA (9x9)
IC SRAM 4MBIT PARALLEL 48CABGA
IC SRAM 4MBIT PARALLEL 48CABGA
| DigiKey | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | IDT71V416VS10BEI-ND | 774-IDT71V416VS10BEI | IDT71V416VS10BEI | IDT71V416VS10BEI | IDT71V416VS10BEI |
| Product Name | Memory | Memory IC and Storage Component | Memory | Memory | Integrated Circuits (ICs) - Memory |
| Memory Category | SRAM Chip | Volatile; SRAM Chip | SRAM; SRAM Chip | SRAM; SRAM Chip | Volatile; SRAM Chip |
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | |
| Density | 4000 kbits | 4000 kbits | 4000 kbits | 4000 kbits | |
| Package Type | 48-TFBGA | BGA; Tray | BGA; 48-TFBGA | BGA |
