Renesas Electronics Corporation Memory IDT71V416VL15Y8

Description
IC SRAM 4MBIT PARALLEL 44SOJ
Description
IC SRAM 4MBIT PARALLEL 44SOJ
Datasheet
Datasheet Summary
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The IDT71V416VL15Y8 is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 15ns. The device includes one chip select and one output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This SRAM utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various systems. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array measuring 9mm x 9mm. The device is characterized by low power consumption, particularly when chip deselect is activated, making it suitable for applications where power efficiency is critical. Engineers considering this memory solution will find it beneficial for high-speed memory needs in a compact form factor.

Datasheet Summary
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The IDT71V416VL15Y8 is a 4Mbit (256K x 16) high-speed CMOS Static RAM designed for both commercial and industrial applications. It operates with a single 3.3V power supply and features equal access and cycle times of 15ns. The device includes one chip select and one output enable pin, along with bidirectional data inputs and outputs that are LVTTL-compatible. This SRAM utilizes fully static asynchronous circuitry, eliminating the need for clocks or refresh cycles, which simplifies integration into various systems. It is available in multiple package options, including a 44-pin, 400 mil plastic SOJ, a 44-pin, 400 mil TSOP Type II, and a 48-ball grid array measuring 9mm x 9mm. The device is characterized by low power consumption, particularly when chip deselect is activated, making it suitable for applications where power efficiency is critical. Engineers considering this memory solution will find it beneficial for high-speed memory needs in a compact form factor.

Suppliers

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Description
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IC SRAM 4MBIT PARALLEL 44SOJ

IC SRAM 4MBIT PARALLEL 44SOJ

Supplier's Site Datasheet
Memory - IDT71V416VL15Y8 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-SOJ

SRAM - Asynchronous Memory IC 4Mbit Parallel 15 ns 44-SOJ

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IDT71V416VL15Y8 IDT71V416VL15Y8
Product Name Memory Memory
Memory Category SRAM; SRAM Chip SRAM; SRAM Chip
Access Time 15 ns 15 ns
Density 4000 kbits 4000 kbits
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